%0 Journal Article
%@secondarytype PRE PI
%@issn 1932-7447
%@dissemination WEBSCI; PORTALCAPES; SCOPUS.
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%@resumeid 8JMKD3MGP5W/3C9JJ37
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%X Potential applications in spintronics and quantum information processing have motivated much recent research in epitaxial films of bismuth telluride. This system is also an example of van der Waals (vdW) epitaxy, where the interface coherence between the film and substrate is based on vdW bonds instead of strong ionic or covalent bonds. Because of the weakness of the vdW bonds, the overall quality of the epitaxial films is difficult to control and structural defects are easily introduced with a significant impact on the electronic phase diagram of the epitaxial films. To elucidate the evolution of defects as a function of the growth parameters, we combine nondestructive methods for electrical and structural analysis, as well as to establish intercorrelations between structural features and density of free charge carriers. It clearly shows that point defects and twinned domains favor p-type of charge carriers. Passivation of points defects by formation of metallic bismuth bilayers (BLs) drastically changes the whole film properties. By replacing vdW bonds with weak covalent bonds, the presence of BLs increases the film stiffness, leading to a smaller lattice misfit and a larger lateral lattice coherence length. Charge carriers are flipped to n-type. A few percent of BLs can be a strategy to achieve films with enhanced performance for device applications.
%8 Oct.
%N 40
%9 journal article
%T Dynamics of defects in van der Waals epitaxy of bismuth telluride topological insulators
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%@electronicmailaddress celso.fornari@inpe.br
%@electronicmailaddress paulo.rappl@inpe.br
%@electronicmailaddress eduardo.abramof@inpe.br
%@nexthigherunit 8JMKD3MGPCW/3ESR3H2 8JMKD3MGPCW/3F358GL
%@usergroup self-uploading-INPE-MCTI-GOV-BR
%@usergroup simone
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%@group CMS-ETES-SESPG-INPE-MCTIC-GOV-BR
%@group LABAS-COCTE-INPE-MCTIC-GOV-BR
%@group LABAS-COCTE-INPE-MCTIC-GOV-BR
%@tertiarymark 8JMKD3MGP3W34P/3NAEMRH
%2 sid.inpe.br/mtc-m21c/2019/10.25.11.36.04
%@affiliation University of Guelph
%@affiliation University of Guelph
%@affiliation Universidade de São Paulo (USP)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%B Journal of Physical Chemistry C
%@versiontype publisher
%P 24818-24825
%4 sid.inpe.br/mtc-m21c/2019/10.25.11.36
%@documentstage not transferred
%D 2019
%V 123
%@doi 10.1021/acs.jpcc.9b05377
%A Morelhão, Sérgio L.,
%A Kycia, Stefan W.,
%A Netzke, Samuel,
%A Fornari, Celso Israel,
%A Rappl, Paulo Henrique de Oliveira,
%A Abramof, Eduardo,
%@area FISMAT
%@holdercode {isadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S}